Engineering publications brought to you by Mark Allen

Memory

Intel unveils third generation SSD

Memory breakthrough could lead to denser data storage

Cadence launches first wide I/O memory controller IP solution

New technology enhances memory storage

Samsung announces 30nm 4Gb LPDDR2 DRAM

DRAM content in tablets to grow 147% in 2011 says IHS

Challenging outlook for Samsung Electronics?

Intel announces ultra fast ssd series with 6Gbps SATA interface

Renesas adds to 32bit mcu range

NOR Flash revenue to decline in 2011?

Samsung mobile DRAM uses 512 pins

Spansion adds to ‘Industry’s fastest’ memory range