Engineering publications brought to you by Mark Allen

Memory

Spin Transfer Technologies and Tokyo Electron announce engineering collaboration

Fast-moving magnetic particles could enable new form of data storage

Enhancing the capacity of memory devices

Samsung unveils first eMRAM test chip based on 28nm FD-SOI process

Cadence unveils memory design and verification tool

Microchip launches low-voltage 64-megabit serial quad I/O SuperFlash memory

Ideal memory material conceptualised

Researchers create magnetoelectric memory

Phenomenon to improve data processing and storage

Collaboration to deliver NVMe-oF architectures

Samsung introduces V-NAND memory solutions

Enterprise-Class SSDs come with 64-Layer 3D Flash Memory