The TP65H015G5WS, Transphorm’s Gen V device, has been designed to address the needs of the Electric Vehicle (EV) market and provides a number of performance enhancements and improved designability.
According to the company, the Gen V GaN solution offers the world’s lowest packaged on-resistance and delivers a 25% lower power loss over Silicon Carbide (SiC) in a standard TO-247-3 package, strengthening the potential of GaN in the EV power conversion market.
‘Transphorm’s demonstration of achieving 10 kilowatts of power from a discrete packaged GaN device in a bridge configuration is further validation of the exciting promise of GaN for electric vehicle converters and inverters,” said the company's CEO Joachim Fetzer.
The SuperGaN Gen V platform incorporates all the learnings from its Gen IV predecessor, patented reduced packaging inductance technology, ease of designability and drivability (Vth of 4 V for noise immunity), and gate robustness of +/- 20 Vmax along with a simplified and reduced assembly structure.
Transphorm has begun sampling the SuperGaN Gen V FET, a 15 mΩ 650 V device, which is unavailable with today’s single chip e-mode GaN technology due to its gate sensitivity.
Matching the lowest R available from typical SiC MOSFETs in a discrete package, the solution is capable of driving more than 10 kW depending on the target application, such as EV OBCs and powertrain inverters, power supplies for rack powered data centre servers, uninterruptible industrial power applications, and renewable photovoltaic inverters.
The TP65H015G5WS will be available for die level module solutions that enable further paralleling for higher power.
Transphorm said that it anticipates its Gen V FET device will receive JEDEC qualification in mid-2021 with AEC-Q101 qualification expected thereafter.
