ARM, TSMC sign agreement targeting 7nm FinFET technology

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ARM and TSMC have entered a multiyear agreement under which they will collaborate on developing 7nm FinFET process technology. Included in the agreement is a design solution for future low power, high performance compute SoCs.

According to the partners, this latest agreement will advance leading edge process technologies beyond mobile and into next generation networks and data centres.

“Existing ARM based platforms have been shown to deliver an increase of up to 10x in compute density for specific data centre workloads,” said Pete Hutton, pictured, ARM’s president of product groups. “Future ARM technology designed specifically for data centres and network infrastructure and optimised for TSMC 7nm FinFET will enable our mutual customers to scale the industry’s lowest power architecture across all performance points.”

The agreement builds on ARM and TSMC’s success with previous generations of 16nm FinFET and 10nm FinFET process technology. Joint innovations from these collaborations are said to have enabled customers to accelerate product development and to take advantage of leading-edge processes and IP. Recent benefits include early access to Artisan Physical IP and tape outs of ARM Cortex-A72 processor on 16nm FinFET and 10nm FinFET.

“TSMC continuously invests in advanced process technology to support our customer’s success,” said Dr Cliff Hou, vice president, R&D. “With our 7nm FinFET, we have expanded our process and ecosystem solutions from mobile to high performance compute. Customers designing their next generation high-performance computing SoCs will benefit from TSMC’s 7nm FinFET, which will deliver more performance at lower power than our 10nm FinFET process node.

“Jointly optimised ARM and TSMC solutions will enable our customers to deliver disruptive, first-to-market products,” he concluded.