CMOS switch outperforms GaAs
1 min read
Infineon is shipping what it claims are the world’s first rf switches that offer GaAs levels of performance from a device manufactured in cmos. Until now, it claims, cmos based rf switches needed to be made using a cmos on sapphire process.
Infineon is shipping what it claims are the world’s first rf switches that offer GaAs levels of performance from a device manufactured in cmos. Until now, it claims, cmos based rf switches needed to be made using a cmos on sapphire process.
“Infineon’s cmos based rf switches require no further external components, such as level shifters, offering more space savings for various board designs,” said Michael Mauer, Infineon’s senior director of silicon discretes. “With the increasing complexity of modern mobile devices, rf switches are expected to substitute today’s PIN diodes in the next five years.”
The BGS12A, the first member of the family, is available in a fine pitch wafer-level package measuring 0.8 x 0.54mm. RF switches are typically used in wireless and consumer products to implement switching functions for receiving and transmitting (Rx/Tx) data, band select or antenna diversity applications.
