The ultra-wide bandgap and high thermal conductivity of AlN help to improve device reliability and performance not only in UVC LEDs but also in next-generation RF and power devices.
“The improvement of our large diameter substrate quality over the last nine months showcases the expertise of our team in Crystal Growth,” said Eoin Connolly, President and CEO of Crystal IS. “The inherent thermal benefits of aluminium nitride can enable higher performing RF and power devices in mission critical and telecom applications - we are excited to work with our partners to further develop this material to meet their needs.”
This achievement follows the company’s announcement of the first-ever recorded 100 mm diameter in August 2023, which won the Grand Prize in the category of Electronic Materials for Semiconductors in the 2024 Semiconductor of the Year Awards.
Crystal IS manufactures bulk single crystal AlN substrates at its headquarters in Green Island, New York, and began selling 2-inch diameter substrates for research and development in RF and power devices in late 2023.
This 100 mm diameter milestone accelerates the development of new applications on AlN substrates as it integrates into existing fabrication lines for RF and power devices using alternative materials.
The company said that it plans to offer 100 mm diameter substrates, which will be exclusively manufactured in its US facility, to key partners this year as they continue to expand beyond UVC LEDs.
