electronica 2012: IR moves into industrial motor drive market with 1200V igbts

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International Rectifier has introduced a new insulated gate bipolar transistor (igbt) technology platform at electronica.

The Generation 8 (Gen8) 1200V platform utilises the company's latest generation trench gate field stop technology to offer 'best in class' performance for industrial and energy saving applications. "With the development of this new benchmark technology and state of the art igbt silicon platform, IR underlines its decades of commitment to the advancement of power electronics technology," said IR's Alberto Guerra. "Our goal is to achieve 100% inverterisation of all electric motors for a more efficient use of electric energy and a greener environment According to Guerrra, the technology offers softer turn off characteristics for motor drive applications, minimising dv/dt to reduce EMI, and over voltage, increasing reliability and ruggedness. IR claims the narrow distribution of parameters offers excellent current sharing when paralleling multiple igbts in high current power modules, while the thin wafer technology is said to deliver improved thermal resistance and maximum junction temperature up to 175°C. "With best in class Vce(on), robustness and excellent switching characteristics, this igbt platform has been specifically tailored to achieve the demanding challenges of the industrial market," Guerra concluded: