IGBTs target induction heating applications
International Rectifier has launched a pair of ultra fast trench insulated gate bipolar transistors (IGBTs) for induction heating and resonant switching applications such as welding and high power rectification.
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The 1200V devices utilise IR's thin wafer trench technology to offer low VCE (on) and ultra fast switching to reduce power dissipation and achieve higher power density. They also feature a 1300V repetitive peak rating for added system reliability.
The IGBTs are co packaged with a low forward-voltage high peak current soft forward-recovery diode, which is optimised for resonant zero current turn-on operation.