Traditional stacked NAND flash memories are connected together with wire bonding in a package, while TSV technology uses the vertical electrodes and vias to pass through the silicon dies for the connection. This enables high-speed data input and output, and reduces power consumption.
According to Toshiba the TSV technology is capable of achieving an I/O data rate of over 1Gbps which is higher than any other NAND flash memories with a low voltage supply: 1.8V to the core circuits and 1.2V to the I/O circuits and approximately a 50% power reduction of write operations, read operations, and I/O data transfers.
This new NAND flash memory provides a solution for low latency, high bandwidth and high IOPS/Watt in flash storage applications, including high-end enterprise SSD.
A part of this applied technology was developed by the New Energy and Industrial Technology Development Organization (NEDO).
