GaN on silicon collaboration looks to cut cost, boost device performance
1 min read
Belgian nanoelectronics research centre imec and US based process equipment specialist Veeco Instruments are collaborating on a project aimed at lowering the cost of producing GaN on silicon based power devices and leds.
Barun Dutta, imec's chief scientist, explained: "The productivity, repeatability, uniformity and crystal quality of Veeco's metal organic chemical vapour deposition (MOCVD) equipment has been instrumental in helping us meet our development milestones on GaN on Si for power and led applications. The device performance enabled by the epi has helped us realise state of the art depletion mode and enhancement mode power devices. Our goal is to establish an entire manufacturing infrastructure that allows GaN on Si to be a competitive technology."
Jim Jenson, general manager of Veeco's MOCVD operations, commented: "We have been working with imec on this program since 2011 and are encouraged by our progress. Our work is mutually rewarding: we are both focused on being able to realise lower costs while maintaining world class performance on GaN on Si devices.
"This technology can be used to create lower cost LEDs that enable solid state lighting, more efficient power devices for applications such as power supplies and adapters, PV inverters for solar panels, and power conversion for electric vehicles."
