ON Semiconductor joins imec’s GaN-on-Si research programme
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ON Semiconductor has joined a multi partner programme at nanoelectronics research centre imec, to collaborate on the development of next generation Gallium Nitride (GaN) on silicon (Si) power devices.
The imec programme is focused on developing GaN-on-Si technology on 200mm wafers, as well as reducing the cost and improving the performance of GaN devices.
"The newest addition of ON Semiconductor as a strategic programme partner further advances our collective expertise," said Rudi Cartuyvels, vp of smart systems and energy technology at imec. "Leveraging joint efforts will help us overcome the next hurdle toward economical volume manufacturing, ultimately bringing GaN power devices to the market."
GaN is said to be ideal for power and rf devices which need high switching efficiencies, due to its by superior electron mobility, higher breakdown voltage and good thermal conductivity properties. However, these devices are too expensive for large volume manufacturing as they are fabricated on small diameter wafers using non standard production processes.
The imec programme has already produced 200mm GaN-on-Si wafers as well as a fabrication process compatible with standard CMOS processes and tools.
