Infineon is the first company to develop this technology in an existing and scalable high-volume manufacturing environment and this success is seen as helping to substantially drive the market for GaN-based power semiconductors. Chip production on 300 mm wafers is technologically more advanced and significantly more efficient compared to 200 mm wafers, since the bigger wafer diameter offers 2.3 times more chips per wafer.
GaN-based power semiconductors are being increasingly adopted in industrial, automotive, and consumer, computing & communication applications, including power supplies for AI systems, solar inverters, chargers and adapters, and motor-control systems.
State-of-the art GaN manufacturing processes are helping to lead to improved device performance delivering benefits in end customers’ applications as it enables efficiency performance, smaller size, lighter weight, and lower overall cost. In addition, 300 mm manufacturing ensures improved customer supply stability through scalability.
Praising the work of the team at Infineon, Jochen Hanebeck, the company’s CEO, said, “This technological breakthrough will be an industry game-changer and enable us to unlock the full potential of gallium nitride. Nearly one year after the acquisition of GaN Systems, we are demonstrating again that we are determined to be a leader in the fast-growing GaN market. As a leader in power systems, Infineon is mastering all three relevant materials: silicon, silicon carbide and gallium nitride.”
Infineon has succeeded in manufacturing 300 mm GaN wafers on an integrated pilot line in existing 300 mm silicon production in its power fab in Villach (Austria), leveraging its competence in the existing production of 300 mm silicon and 200 mm GaN.
Infineon said that it will look to further scale GaN capacity aligned with market needs. 300 mm GaN manufacturing will put Infineon in a position to shape the growing GaN market which is estimated to reach several billion dollars by the end of the decade.
Infineon will present the first 300 mm GaN wafers to the public at the electronica trade show in November 2024 in Munich.
A significant advantage of 300 mm GaN technology is that it can utilise existing 300 mm silicon manufacturing equipment, since gallium nitride and silicon are very similar in manufacturing processes. Infineon’s existing high-volume silicon 300 mm production lines can be used to pilot reliable GaN technology, allowing accelerated implementation and efficient use of capital. Fully scaled 300 mm GaN production will contribute to GaN cost parity with silicon on R DS(on) level, which means cost parity for comparable Si and GaN products.
