This device, according to KIOXIA, has the highest capacity in the industry and takes storage devices to a new capacity point that is seen has helping to drive growth in multiple application segments including AI.
With its latest BiCS FLASH technology, KIOXIA has achieved both vertical and lateral scaling of memory die through proprietary processes and new architectures. In addition, the company has implemented the CBA (CMOS directly Bonded to Array) technology, which enables the creation of higher density devices and an interface speed of 3.6Gbps. Taken together, these advanced technologies are applied in the creation of 2Tb QLC, resulting in a high-capacity memory device.
The 2Tb QLC is equipped with a bit density approx. 2.3 times higher and a write power efficiency approx. 70 percent higher than KIOXIA’s current fifth-generation QLC device which is the highest capacity in KIOXIA’s products. With a 16-die stacked architecture in a single memory package, the latest QLC device achieves 4TB (tera byte) of capacity. It is available with a smaller package size of 11.5 x 13.5mm and a package height of 1.5mm.
"We are pleased to be shipping samples of our new 2Tb QLC with the new eighth-generation BiCS FLASH technology,” said Hideshi Miyajima, Chief Technology Officer of KIOXIA. “With its industry-leading high bit density, high speed data transfer, and superior power efficiency, the 2Tb QLC product will offer new value for rapidly emerging AI applications and large storage applications demanding power and space savings.”
In addition to the 2Tb QLC, KIOXIA also added a 1Tb QLC memory devices to its portfolio. In comparison with the capacity-optimised 2Tb QLC, the 1Tb QLC offers approx. a 30 percent faster sequential write performance and approx. a 15 percent improvement in read latency.
The 1Tb QLC will be deployed in high performance applications, including client SSD and mobile.
