Memory efficiency boosted
Rambus believes it has achieved a new level of power efficiency with its latest silicon test vehicle, developed under its Mobile Memory Initiative (MMI).
The latest silicon validated results demonstrate that, through the use of MMI innovations, a high bandwidth mobile memory controller can achieve a power efficiency of 2.2mW/Gbit/s – a 33% improvement over the initial MMI silicon and significantly better than the estimated 10mW/Gbit/s of an LPDDR2 400 memory controller.
"The performance demands of next generation mobile devices are vastly outstripping the pace of battery technology improvements," said Martin Scott, Rambus' senior vice president of Research and Technology Development. "With the innovations developed through our MMI, we can deliver advanced applications and maintain long battery life through our breakthroughs in both bandwidth performance and power efficiency."