Microsemi targets Gallium Nitride FETs for space applications
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Microsemi has announced the development of enhancement mode Gallium Nitride field effect transistors (FETs) for satellites and other military power conversion, point of load and high speed switching applications.
The FETs are built on a wide band gap material, which the semiconductor specialist says increases performance over current radiation hardened silicon mosfets.
The company is working with Efficient Power Conversion (EPC) to develop a complete line for aerospace and defence applications. The first devices will be offered in 40, 60, 100, 150 and 200V and will have drain to source on resistance values of 4 to 100 mO. Microsemi says the devices are expected to deliver junction temperatures approaching 300°C. Standard through hole and surface mount packages in addition to flip chip die will be available.
Preliminary radiation testing of the devices showed high single event effect and total ionising dose capability enabling the devices to operate in high orbit and deep space missions without degradation to performance. Microsemi will work with the Defense Logistics Agency to define the test specifications within standard military drawings (MIL-PRF-19500 slashsheets)..
A jointly researched paper, Enhancement Mode Gallium Nitride Characteristics Under Long Term Stress will be presented at the Government Microcircuit Applications and Critical Technology Conference, March 21-24, 2011 in Orlando, Florida. The study covers the reliability testing results and demonstrates the stability of the devices at temperature and under radiation exposure.
Prototype samples are expected to be available by mid 2011 with production quantities by November 2011.
