MOSFET features lowest RDS(on) claims IR

The Hexfet mosfets incorporate IR's latest silicon technology and are the power management specialist's first devices available in a 5 x 6mm PQFN package with optimized copper clip and solder die. According to IR, the IRFH6200TRPbF 20V device delivers RDS(on) of 1.2mOhm (max) at 4.5V Vgs, which the company claims will 'significantly cut conduction losses' for dc motor drive applications such as hand tools. The 25V IRFH5250TRPbF and 30V IRFH53xxTRPbF devices are designed for dc switch applications such as active ORing and dc motor drive applications requiring high current carrying capability. The IRFH5250TRPbF features RDS(on) of 1.15mOhm (max) combined with 52nC gate charge (Qg) while the IRFH5300TRPbF delivers RDS(on) of 1.4mOhm (max) combined with 50nC Qg. Doug Rusell, IR's vice president, Power Management Devices Business Unit, said the devices were a result of the company's commitment to mosfet technology. He said: "Moreover, our product roadmap will deliver an expansive portfolio of PQFN benchmark mosfetd over the coming months in response to customer requirements." All of the devices are MSL1 industrial-qualified and RoHS compliant containing no lead, bromide or halogen.