Mosfet offers ‘lowest ever’ Rds(on)
NXP has launched a 25V mosfet with an Rds(on) of less than 1mohm, said by the company to be the 'lowest ever' in a device of its kind supplied in a Power SO8 package.
"The technology for producing mosfets is an ongoing race to improve performance," said John David Hughes, NXP's senior international product marketing manager. "We are using innovative techniques in the new Trench 6 process, which further reduces on resistance. There are many advantages of the new Trench technology to our customers, such as improved switching efficiency from the silicon and superior electrical and thermal resistance from the package."
The PSMN1R2-25YL mosfet, which combines the Power-S08 LFPAK package with latest Trench 6 generation silicon, offers a range of performance and reliability improvements, including a typical Rds(on) of 0.9mohm for a 25V part and 1mohm (typical) for a 30V part.
