MOSFETS enable major improvement in high speed trr says ROHM
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ROHM Semiconductor has expanded its range of high speed switching, high voltage resistance mosfets for PFC circuits in switching power supplies and main switch circuits. A number of package types are available in surface mount and through hole configurations.
The new series, PrestoMOS, features low trr characteristics for high speed, high speed switching, high efficiency and low loss. According to ROHM, it is suitable for integrated power supply inverters, lighting, motor drivers, solar batteries, power conditioners, high frequency bridge circuits and applications that require high performance operation.
The series is designed to achieve 'unmatched' low ON resistance, low Qg and high speed due to ion based production technology and new high voltage processes. ROHM claims the high speed trr body diode eliminates the need for an external fast recovery diode (FRD), while the device consumes a small mounting area.
According to the semiconductor specialist, compared to conventional 600V/8V products, not only the trr but also the lrr ratio as well as the loss comparison are 'significantly improved'. For instance, a power conditioner circuit only requires four components without external FRDs. The company adds that the series is based on high voltage resistance processes to reduce ON resistance by as much as 50% and Qg by 40% over conventional products, while switching speed improves by around 30%.
