SiC diodes provide ‘industry leading’ performance

The SCS1xxAGC SCS1xxAGC series of high performance silicon carbide (SiC) Schottky barrier diodes (SBD) is said to improve power conversion efficiency in applications such as PFC/power supplies, solar panel inverters, uninterruptible power supplies and air conditioners. According to ROHM, the series maintains low forward voltage over a wide operating temperature range which results in lower power dissipation under actual operating conditions. The 10A rated part has a VF of 1.5V at 25°C and 1.6V at 150°C. Low VF reduces conduction loss while the ultra short reverse recovery time (15ns, typical) enables high speed switching and minimises switching loss. David Doan, senior technical product marketing manager for ROHM Semiconductor, said: "SiC is the ideal material for power electronics with its high breakdown voltage, low power loss, high operating temperature and superior thermal conductivity. ROHM is not the first vendor to offer SiC SBDs, but we're introducing devices with some differentiating features such as low VF and the highest current rating at 600V (a true 600V/20 A SBD, not dual 2x10A). These diodes are but the first in ROHM's SiC product lineup. We also have 1200V SBDs and mosfets, currently in sampling at strategic partners, to address higher power applications such as UPS and to enable all SiC power devices."