MOSFETs target high speed switching applications

Said to combine high speed switching, high current ratings and a compact package size, the mosfets are designed for a variety of digital home appliances, office equipment and other products that require synchronous rectification dc/dc conversion. The devices are based on Toshiba's 7th generation UMOS VII-H semiconductor process and are available in SOP-8 and TSON Advance package formats. The latter is said to bridge the gap between industrial standard SOT23 and SOP8 packages. They measure 3.3 x 3.3mm and, according to Toshiba, deliver a 64% smaller footprint than an SOP-8 device with an equivalent power rating. The company's UMOS VII-H low voltage trench structure is optimised to allow the new mosfets to deliver a combination of low on resistance (RDS(ON)) and high speed switching characteristics. In addition, a low internal gate resistance and a low Cgd/Cgs gate capacitance ratio are said to help to prevent the possibility of self turn on. All of the new mosfets have a maximum VDSS rating of 30V and a maximum VGSS rating of ±20V. Typical RDS(ON) values (VGS = 10V) range from 20Mohm down to 6Mohm depending on the device chosen. The TPC806x-H and TPC822x-H devices are supplied in SOP-8 and dual chip SOP-8 packages, respectively. The TPCC806x-H parts in the TSON advanced package are designed to achieve a power dissipation of 1.9W, due to a metal base plate.