The L5 family is based on the company's TRENCHSTOP 5 thin wafer technology, with the intrinsically low conduction losses further reduced by optimisation of the carrier profile.
With a typical VCE(sat) value at 25°C of 1.05V, the parts are said to increase efficiency by 0.1% in an NPC 1 topology or by up to 0.3% in an NPC 2 topology when replacing predecessor TRENCHSTOP IGBTs.
TRENCHSTOP 5 technology is said to reduce total switching losses to as little as 1.6mJ at 25°C, contributing to higher efficiency, improved reliability and smaller dimensions.
The L5 IGBT family is being released in the industry standard TO-247 3pin package. But, for applications requiring extended efficiency enhancement, Infineon can also supply the L5 in the TO-247 4pin Kelvin-Emitter package. This is said to provide a further 20% reduction in switching losses.
The L5 family is available as a single IGBT in 30A and 75A variants and packaged with the company's ultrafast Rapid 1 and Rapid 2 silicon diodes. The TO-247 4pin Kelvin-Emitter package will be available in a 75A format.
