40V gate driver reduces IGBT switching losses
Designed specifically for switching high power IGBTs, the ZXGD3006E6 gate driver from Diodes is optimised to increase power conversion efficiency in solar inverter, motor drive and power supply applications.
The device provides a drive current of 4A for an input current of 1mA, making it a suitable high gain buffer stage between the high output impedance of a controller and the low input impedance of the IGBT.
An emitter follower configuration has been implemented to make the gate driver resistant to latch up and shoot through issues. Diodes says it delivers propagation delay times of less than 10ns.
The gate driver offers separate source and sink outputs, allowing independent control of rise and fall times. This is said to allow for controlled charge and discharge of large gate capacitive loads and reduce the risk of emi issues and cross conduction at higher operating frequencies.
