This partnership agreement is being described as a significant next step in the long-lasting close relationship between both companies and will focus on power components with the aim of jointly developing GaN applications for electric vehicles (EV).
As passenger vehicles become increasingly electrified, the demand for power semiconductors to provide efficient power conversion at increasingly higher power densities is growing significantly.
High voltage Power GaN FETs, when combined with innovative packaging technologies, can address the requirements for better efficiency, higher power density and reduced system cost. GaN power devices not only offer improved levels of performance in these applications but also provide the reliability, robustness and manufacturability expected of a mainstream technology serving a broad range of applications across multiple market segments.
Nexperia manufactures GaN devices in its own facilities using mature mass production techniques which have been proven to meet the highest reliability requirements for devices to achieve AEC-Q101 certification.
Commenting on the announcement Carlos Castro, Vice President and General Manager GaN Nexperia, said, "GaN devices bring many benefits to EV applications including increased power density, improved efficiency and lower overall system cost. However, optimised packaging technology is required in order to more fully realize the benefits of GaN devices, especially in high power systems. Nexperia recognises the advanced technology offering and leading position which KYOCERA AVX holds in the automotive industry and believes that this joint collaboration in the development of GaN automotive power modules will enable both companies to deliver superior EV power systems solutions to our customers."
