By augmenting its cascode offering with seven new e-mode devices, Nexperia is now able to provide designers with a choice of GaN FETs from a single supplier, as well as its substantial portfolio of silicon-based power electronics components.
The portfolio includes five 650 V rated e-mode GaN FETs (with RDS(on) values between 80 mΩ and 190 mΩ) in a choice of DFN 5x6 mm and DFN 8x8 mm packages. They improve power conversion efficiency in high-voltage, low-power (<650 V) datacom/telecom, consumer charging, solar and industrial applications. They can also be used to design brushless DC motors and micro server drives for precision with higher torque and more power.
Nexperia now also offers a 100 V (3.2 mΩ) GaN FET in a WLCSP8 package and a 150 V (7 mΩ) device in a FCLGA package. These are suitable for various low-voltage (<150 V), high-power applications to deliver, for example, more efficient DC-DC converters in data centres, faster charging (e-mobility and USB-C), smaller LiDAR transceivers, lower noise class D audio amplifiers and more power dense consumer devices like mobile phones, laptops, and games consoles.
GaN FETs are able to offer high power efficiency with a compact solution size in many power conversion applications, features which substantially reduce the bill of materials (BOM).
As a result, GaN devices are increasingly entering mainstream power electronics markets. GaN-based devices are able to offer a fast transition/switching capability (highest dv/dt and di/dt) and deliver improved levels of efficiency in low- and high-power conversion applications. The switching performance of Nexperia’s e-mode GaN FETs is attributable to very low Qg and QOSS values, while their low RDS(on) enables more power-efficient designs.
With this release Nexperia can now supply a broad offering of GaN FET products to suit a wide range of power applications including cascode devices for high-voltage, high-power applications, 650 V e-mode devices for high-voltage, low-power applications and 100/150 V e-mode devices for low-voltage, high-power applications.
In addition, Nexperia e-mode GaN FETs are fabricated on an 8” wafer-line for increased capacity and qualified for industrial applications according to JEDEC standard.
