NXP to launch 50 rf/microwave products based on SiGe process technology

Designed to address the growing demand for more robust, cost effective and highly integrated silicon based technology, NXP plans to offer a total of more than 50 products based on SiGe:C by end of 2010. According to NXP its QUBiC4 SiGe:C process is specifically designed to meet the needs of applications in the wireless, broadband communications, networking, and multimedia markets. "As a global leader in rf technology and component design, NXP is committed to the development of products produced with SiGe:C technology to address the fast moving dynamics of the rf/microwave markets," said Ronald van Cleef, NXP's general manager, rf small signal business. "We endeavour to provide cost effective, integrated, high frequency solutions with the performance of gallium-arsenide (GaAs) technologies using a silicon-based process," NXP's process has been designed to allow manufacturers of wireless equipments to add more functionality onto devices with less space and competitive cost. The QUBiC4 technology speeds the migration from GaAs technology to silicon by enabling low noise performance and IP availability. There are three variants available: QUBiC4+, a silicon based process for applications up to 5GHz such as medium power amplifiers; QUBiC4X, a 0.25µm SiGe:C process, typically used for applications up to 30GHz and very low noise applications such as GPS; and the most recent 0.25µm QUBiC4Xi SiGe:C process, offering on Ft in excess of 200GHz, which is particularly suited for applications above 30GHz and those requiring minimum noise figure, such as VSAT and radar. NXP plans to make available over 50 products based on the SiGe:C process by the end of 2010 including wideband transistors, low noise amplifiers, medium power amplifiers, variable gain amplifiers and LO generators.