Plessey to expand rf capability by developing 8in SiGe BiCMOS technology
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Plessey Semiconductors has started developing a 0.35micron silicon germanium (SiGe) BiCMOS process technology on its 8in line at its Plymouth based semiconductor manufacturing facility.
As part of its strategy of developing its three core product lines of sensors, rf components and power management devices it was decided that a bespoke SiGe BiCMOS process was required.
According to Plessey, the products manufactured on this process will take advantage of having a 70GHz, 2.5V breakdown voltage architecture together with a 40GHz 5V breakdown voltage architecture on the same substrate. The process will also include a range of analogue and high performance passive components including Schottky diodes, varactors, high Q inductors and MIM capacitors.
Potential products include high performance transceivers for optical communications, next generation data converters for test and measurement systems and high speed amplifiers - including logarithmic amplifier. Plessey says that a log amp design using its SiGe technology could operate at frequencies up to 5GHz, a 10 fold increase in performance compared to a previous technology implementation. The SiGe BiCMOS process is expected to be available by mid 2011 and the first Plessey products will be sampled by the end of 2011.
Dr Peter Osborne, chief technologist, said: "We have looked at SiGe bipolar and BiCMOS process technologies for some time and have developed processes for other fabs. We believe that our exceptional complementary bipolar processes on SiGe together with our 0.35 CMOS capability should provide a compelling platform from which Plessey can develop outstanding product lines."
