ON expands igbt offering with new low power devices
ON Semiconductor has expanded its NGBTxx family of 1200V trench field stop insulated gate bipolar transistor (igbt) devices to include nine new energy efficient solutions.
Suitable for high performance power conversion in solar power and uninterruptable power supply, the devices are said to improve overall system switching efficiency, lower power dissipation and improve system reliability.
John Trice, senior director and general manager for ON Semiconductor's power discrete products, said: "This new generation of devices brings cost effective, industry leading power efficiency without sacrificing robustness. With ON Semiconductor's proprietary Trench Field Stop Technology, we can now give engineers a greater breadth of options to choose from when implementing their power system designs."
The first group of new igbts are the NGTB40N120FLWG, NGTB25N120FLWG and NGTB15N120FLWG. All three are optimised to provide superior performance in high frequency switching applications. Low switch losses and an ultra fast recovery diode make them suitable for high frequency solar, UPS and inverter welder applications.
