IGBT targets soft switching applications
A 1400V Trench Insulated Gate Bipolar Transistor (IGBT), optimised for soft switching applications, has been launched by International Rectifier.
Co-packaged with an ultra-low forward voltage diode, the IRG7PK35UD1PbF utilises IR's Gen7 thin-wafer trench technology to deliver ultra low VCE(ON) and ultra fast switching to offer lowest conduction and switching losses for high system efficiency in induction heating applications.
IR says expanding the voltage range of the device to 1400V enables the design of higher power, single ended parallel resonant power converters and offers additional guard band for more robust designs.
