onsemi looks to simplify the design of renewable energy applications

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onsemi has unveiled its 7th generation of 1200V QDual3 Insulated Gate Bipolar Transistor (IGBT) power modules.

Credit: onsemi

These modules offer increased power density and deliver up to 10% more output power than many other competing products, according to onsemi.

Based on the latest Field Stop 7 (FS7) IGBT technology, the 800-amp (A) QDual3 module delivers increased levels of efficiency to reduce system costs and simplify designs. In a 150KW inverter, the QDual3 module will dissipate 200W less in losses compared to its closest competitor, significantly reducing heatsink size.

QDual3 has been engineered to work under harsh conditions and is intended for high-power electronics converters such as central inverters in solar farms, energy storage systems (ESS), commercial agricultural vehicles (CAVs) and industrial motor drives.

Currently, two products are available depending on the applications – the NXH800H120L7QDSG and SNXH800H120L7QDSG.

At a time of increasing renewable energy adoption, which has amplified the need for solutions that can manage peak demand and ensure continuous power supply, peak shaving, which is the practice of reducing electricity use during peak hours, is becoming essential for maintaining electric grid stability and reducing costs.

By using the QDual3 modules, manufacturers can construct a solar inverter and ESS that output more power in the same system size, enabling more efficient energy management and storage capabilities, allowing for a smoother integration of solar power into the grid.

The modules also mitigate the intermittency of solar energy by storing excess power in an ESS, ensuring a reliable and consistent energy flow. For large systems, the modules can be paralleled to increase the output power up to a couple of MWs and compared to traditional 600 A module solutions, the 800 A QDual3 can significantly reduce the module quantity, greatly simplifying design complexity and cutting system costs.

The QDual3 IGBTs module features an 800 A half-bridge configuration that integrates the latest Gen7 trench Field Stop IGBT and diode technology using onsemi’s advanced packaging techniques to reduce switching and conduction losses. With the FS7 technology, the die size is reduced by 30%, allowing more die per module, increasing the power density to enable the maximum current capacity up to 800 A or higher.

With an IGBT Vce(sat) as low as 1.75V (1750C) and low Eoff, the 800 A QDual3 module dissipates 10% lower energy losses than the next-best alternative. The modules also meet the stringent standards required of an automotive application.

“Increased electrification of commercial fleets such as trucks and buses and the need of renewable energy sources demand solutions that can generate, store and distribute power more efficiently. Transferring energy from renewable sources to the grid, storage systems and to downstream loads with the lowest power losses possible is increasingly critical,” said Sravan Vanaparthy, vice president, Industrial Power Division, Power Solutions Group, onsemi. “With its industry-standard pin-out and efficiencies, QDual3 enables power electronics designers to plug and play these modules for an immediate performance boost in their systems.”