Plessey acquires GaN led technology to attack smart lighting market
1 min read
Plessey has acquired University of Cambridge spin out CamGaN in a move which will allow it to offer some of the most cost effective high brightness (HB) leds yet developed.
The move brings together CamGaN's HB GaN technology and Plessey's 6in processing facility in Plymouth. Dr John Ellis, Plessey's chief engineer, said: "To date, the biggest technological challenge preventing the commercialisation of HB leds grown on large area silicon substrates has been the large lattice mismatch between GaN and silicon. Plessey's GaN on silicon process has overcome this challenge and our expertise, combined with the intrinsic cost savings of using automated 6in processing equipment, will position Plessey's HB led lighting products at the forefront of the industry."
Plessey will grow HB led structures on silicon substrates, rather than the more expensive and size limited SiC and sapphire alternatives. It says this may allow 150lumen/W leds to be made for 80% less than those grown on SiC or sapphire.
Plessey has also announced plans to release a range of products for smart lighting concepts that incorporate existing Plessey sensing and control technologies. These smart lighting products will enable intelligent energy management, remote control, controlled dimming and automated response to ambient conditions.
