Plessey demonstrates large GaN-on-Si LED die
UK manufacturer Plessey has developed a large LED die based on its GaN-on-Silicon technology.
Produced as a technology demonstrator, the die benefits from three core features: low thermal resistance, a single surface, emitter die design and 6in wafer processing.
In addition, it utilises Plessey's vertical design structure, which has a cathode top and anode bottom contacts.
To exploit these benefits, Plessey has produced a 20mm2 die design that can generate up to 5W of blue light over a 400 to 480nm wavelength range.
David Owen, Plessey's marketing director, commented: "It is clear that the next wave of general lighting products will see LEDs applied in ways that truly exploit the benefits obtained through Plessey's leading GaN-on-Si technology.
"This announcement marks the start of a phase where we engage with our key partner customers in defining the commercial realisation of lighting products based on Plessey's large GaN-on-Silicon LED die."
