Using its propriety monolithic GaN-on-Silicon (GaN-on-Si) technology, Plessey has been able to achieve a number of technology breakthroughs including the latest development of an ultra-fine, ultra-high resolution 2000x2000 pixel display on a 2.5 microns pitch.
The display uses microLEDs, a technology that is starting to play a critical role in the development of next-generation wearables, AR/VR hardware, and heads-up displays (HUDs). They require approximately 20% of the power of typical LCOS or DLP displays and can achieve five times brighter images than OLEDs so allowing more comfortable outdoor viewing.
Commenting Clive Beech, Senior Director, Business Development, at Plessey, said: “Pixel pitch is key to the physical size of large field displays and to the resolution of the viewed image. These are key attributes in AR systems. The 2k2k display scale can be realised in a compact physical form factor and the 2.5micron pixel pitch achieves image features with smooth borders and fine detail.
An example of Plessey’s latest scalable pixel architecture, these microLED display products will enable many new innovations and exciting applications in both augmented reality (AR) and mixed reality (MR) smart glasses.”
Plessey’s GaN-on-Si technology brings a number of benefits. The low thermal resistance of the silicon substrates allows highly efficient heat extraction resulting in lower junction temperatures with high reliability. The technology also allows impressive energy efficiency, high resolution and contrast. With its similarity to large scale Silicon IC processing the technology can be scaled to progressively larger wafers, improving cost, uniformity and yield and taking advantage of the latest advances in Silicon wafer processing tools of the volume IC industry.
