The funding will come in two stages with an initial grant of €2.5 million from the EIC Accelerator followed by an equity investment of €2.75 million from the EIC Fund.
The GCRAM memory cell is a 3T DRAM cell with a substantially extended refresh period. According to RAAAM, with AI applications requiring more SRAM it sees an opportunity to offer a a superior drop-in replacement for SRAM.
GCRAM is said to deliver a 50% reduction in die size with a 10x reduction in power consumption compared to SRAM. It also claims to enable voltage scaling capabilities of 450mV read and write voltage in 16nm FinFET process technology.
RAAAM said the technology has been validated on nodes down to 16nm and ‘successfully evaluated” in 5nm.
Headquartered in Israel, RAAAM also has a design centre in Switzerland.
