Investors include Serpentine Ventures, J-Ventures, HackCapital, Silicon Catalyst Angels, Claves Investments and large multi-national semiconductor company as a strategic investor.
With the memory bottleneck a major concern in modern Systems-on-a-Chip (SoC) - the size of on-chip embedded memory continues to increase, reaching up to 75% of the total SoC real estate in some applications like Artificial Intelligence (AI) and Machine Learning (ML) - standard Static Random Access Memory (SRAM) technology is proving to be both very area-inefficient and faces major scaling difficulties in modern process technologies below 10nm.
To address these issues RAAAM has developed Gain-Cell Random Access Memory (GCRAM) technology which is an on-chip memory solution that only requires 3 transistors to store a bit of data, as opposed to 6-8 transistors needed for the existing SRAM-based highest-density memory technology.
“The GCRAM solution reduces area by half and power consumption by a factor of five and can be manufactured cost efficiently using the standard CMOS process,” said Robert Giterman, RAAAM Co-Founder and CEO. “Our GCRAM technology was successfully validated on silicon in various nodes including Bulk CMOS, FD-SOI, and FinFET processes of leading foundries. RAAAM currently aims to migrate its GCRAM memory technology to nodes smaller than 5nm and to fully qualify it for production according to the industry standards.”
RAAAM was founded by four PhDs from Bar-Ilan University and the Swiss Federal Institute of Technology Lausanne (EPFL) that are specialising in Very Large-Scale Integration (VLSI) design.
One of the investors Michael Stucky, CIO at Serpentine Ventures, commented, “RAAAM is introducing a new on-chip memory category, transforming the silicon industry with a novel approach to higher density and lower power chips.”
