Record breaking thin films unveiled
Researchers at the Japanese International Center for Materials Nanoarchitectonics (MANA) have shown simultaneous improvements in a number of material properties, including relative permittivity, lower loss and leakage current. This work is thought to have application in next generation electronics.
As part of the project, MANA researchers – led by Dr Minoru Osada – have developed the highest performance thin film capacitors using a new high k dielectric sheet with a thickness of around 1nm.
Dr Osada and his colleagues created thin films based on titanium-niobate nanosheets. The team delaminated layered oxides and stacked sheets on an atomically flat SrRuO3 substrate, creating films with thicknesses of up to 15nm. The thin film capacitors developed in this way have shown permittivities of up to 300.
The researchers say their room temperature process opens multiple possibilities for the development of high k dielectrics in capacitor technology, gate insulators in organic field effect transistors, energy storage devices and flexible electronics.
