Renesas introduces new power mosfets for automotive applications
Renesas Electronics has introduced 32 new N-channel power mosfets with voltage tolerances of 40 and 55V. The company says that by using the new portfolio, customers will be able to build automotive control units that are more compact and higher in performance.
All of the mosfets employ Renesas Electronics' newly developed ANL2 fabrication process, which aims to minimise on resistance and provide improved high speed switching performance. Compared to the conventional UMOS4 process, the ANL2 process is said to provide approximately 40% improvements on the Figure of Merit (FOM) Performance index equivalent to the device on resistance multiplied by the gate charge.
The portfolio includes the NP75N04YUK device featuring a compact HSON package with one half the mounting area of the existing TO-252 package and the capability to handle current flows up to 75A. The device combines the advanced ANL2 technology with the compact HSON-8 package and can achieve an on resistance of 3.3m?, among the lowest in the industry for an automotive device of this size according to Renesas.
