RFMD unveils 30 to 512MHz, 9W GaN wideband power amplifier
RFMD's RFHA1003 Gallium Nitride (GaN) power IC is a wideband power amplifier designed for continuous wave and pulsed applications such as military communications, electronic warfare, wireless infrastructure, radar, two way radios and general purpose amplification.
Using a high power density GaN semiconductor process, RFMD says the amplifier achieves high efficiency, flat gain and power over a large instantaneous bandwidth in a single amplifier design. The GaN discrete amplifier is 50O input matched packaged in a small form factor 5 x 6mm SOIC-8 outline air cavity ceramic package. According to RFMD it provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies.
Ease of integration is accomplished through the incorporation of optimised input matching network within the package, designed to provide wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimising power and efficiency for any sub band within the overall bandwidth.
