9W GaN wideband power amplifier

Using an advanced high power density Gallium Nitride (GaN) semiconductor process, the amplifier is said to achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RF3826 is an input matched GaN transistor packaged in an air cavity ceramic package which RDMD says provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimised input matching network within the package that is designed to provide wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth Features include: Advanced GaN HEMT and heat sink technology; input internally matched to 50O; output power of 9W; 30 to 2500MHz instantaneous bandwidth; Gain of 12dB; and power added efficiency of 45% (30 to 2500MHz), 50% (200 to 1800MHz). Applications include Class AB operation for public mobile radio, test and Instrumentation, power amplifier stage for commercial wireless infrastructure and civilian and military Radar.