The partnership is intended to leverage GaN Systems’ capabilities in power GaN transistors along with ROHM’s comprehensive footprint in semiconductor and considerable resources in the design and manufacture of electronic components.
Both companies have agreed to jointly develop form-, fit-, and function-compatible products using GaN semiconductor dies in both GaN Systems’ GaNPX packaging and ROHM’s traditional power semiconductor packaging.
The announcement means that GaN Systems and ROHM customers will now have the advantage of having two possible sources for package-compatible GaN power switches, presenting the widest selection of dual-sourced GaN devices.
Customers will also benefit from greater access to GaN products and resources globally, especially in Asia, one of the fastest growing market for GaN. In addition, GaN Systems and ROHM will work together on GaN semiconductor research and development activities to propose solutions for the industrial, automotive, and consumer electronics fields. And to contribute to greater energy savings and increased power densities in the power electronics market, both companies will continue to collaborate to expand their line-up of GaN products and broaden the range of choices.
“GaN has rapidly made its ascent into power electronics applications and this partnership exemplifies how important GaN has become in a complete power electronics offering,” said Jim Witham, CEO of GaN Systems. “By combining our joint expertise and capabilities, we’re enabling more businesses to access and experience the benefits of GaN in achieving higher power, more efficient, smaller, and lighter power electronics.”
