The 10 A, 650 V SiC Schottky diode is an industrial-grade part that looks to address the challenges associated with demanding high voltage and high current applications. These include switched-mode power supplies, AC-DC and DC-DC converters, battery-charging infrastructure, uninterruptible power supplies and photovoltaic inverters and allow for more sustainable operations.
Data centres, for example, equipped with power supplies designed using Nexperia's PSC1065K SiC Schottky diode will now be better placed to meet rigorous energy efficiency standards than those using solely silicon-based solutions.
The PSC1065K delivers cutting edge performance with temperature-independent capacitive switching and zero recovery behaviour culminating in an impressive figure-of-merit (QC x VF). Its switching performance is almost entirely independent of current and switching speed variations.
The merged PiN Schottky (MPS) structure of the PSC1065K provides additional benefits, such as robustness against surge currents that eliminates the need for additional protection circuitry. These features significantly reduce system complexity and enable hardware designers to achieve higher efficiency with smaller form factors in rugged high-power applications.
This SiC Schottky diode is encapsulated in a Real-2-Pin (R2P) TO-220-2 through-hole power plastic package. Additional package options include the surface mount (DPAK R2P and D2PAK R2P) and through-hole (TO-247-2) with a real 2-pin configuration that enhances reliability in high-voltage applications at temperatures up to 175 °C.
Nexperia plans to continuously augment its portfolio of SiC diodes by including automotive-grade parts that operate at 650 V and 1200 V voltages with currents in the 6-20 A range.
Samples and production quantities of the new SiC diodes are available now.
