Siltronic joins imec's GaN-on-Si research programme
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Siltronic AG has joined a global affiliation programme organised by nanoelectronics research institute imec to develop gallium-nitride-on-silicon wafers.
The endeavor aims to enable production of 200mm silicon wafers with enhanced properties and reduced production costs. imec believes it will offer significant advances in the development of next generation solid state lighting and power semiconductors.
"Gallium nitride is a very promising material," noted Dr Rüdiger Schmolke, senior vp of technology at Siltronic. "Combining superior electron mobility, high breakdown voltage and good thermal conductivity, it is particularly suitable for optoelectronics and advanced power semiconductors. We believe this research project will help us to further consolidate our leadership position in this market."
"We are delighted to welcome Siltronic into our research network," added Rudi Cartuyvels, vp of r&d at imec. "Siltronic has an enormous amount of experience in epitaxial deposition on silicon wafers that will increase the momentum of our GaN programme to deliver a manufacturable GaN technology on 200mm silicon wafers."
