STMicroelectronics devices strengthen presence in rf power market
1 min read
STMicroelectronics has announced new rf power transistors built using a technology that it claims increases performance, ruggedness and reliability in a range of applications such as government communications, emergency services' radio and L band satellite uplink equipment.
In such applications, high rf power output at high frequencies is required, while at the same time having the ability to produce low distortion.
According to ST, the LET range uses its STH5P LDMOS technology which enables rf transistors to operate at frequencies up to 2GHz with major linearity, ruggedness and reliability improvements. The company adds that efficiency is increased by 10 to 15% compared to devices using ealier LDMOS processes. The devices also have 3dB higher gain than the predecessors, an increase in breakdown voltage from 65V to 80V and improved thermal performance.
ST's rf product marketing and application support manager, Serge Juhel, said LDMOS is a key enabling technology for high speed, robust wireless communications. "Our next generation devices will help equipment designers boost rf power without compromising important system metrics, including linearity, ruggedness and reliability," he said. "The advanced products we are announcing today will deliver benefits in critical applications such as private mobile radio, government wideband communications, avionics systems and satellite uplink radio."
There are six devices in the LET range, with five more scheduled for production in Q4 2011.
