Air cavity package announced for next gen rf power transistors
1 min read
Innovative plastic air cavity packages, designed to enable high power transistors for rf applications have been announced by STMicroelectronics. Applications include transceivers, broadcast equipment and mri scanners.
ST's STAC plastic packages have been designed to achieve junction to case thermal resistance of 0.28°C/W, which ST claims is 20% better than comparable ceramic packages. According to ST, this improves heat removal from the die during normal operation, allowing transistors to deliver increased gain and greater output power.
ST has introduced three new devices for applications up to 250MHz using this new package technology, including a 100V vhf mosfet, which the company says is the only one available on the market. The 100V STAC3932B/F, in bolt down or flangeless configurations, has 26dB linear gain and has been designed to sustain pulse power output up to 900W.
The STAC2932B/F and STAC2942B/F are 50V devices having linear gain and continuous rated output power of 20dB/400W and 21dB/450W respectively. The devices achieve nominal efficiency from 68% to 75%. The bolt-down version of the device is in production, while the flangeless variant is now sampling and will be in full production in Q2 2010.
