Alongside Toshiba’s existing G0 SPICE models that emphasise computational speed over accuracy, the new range of G2 SPICE models is now accessible to simulate transient characteristics more accurately.
Simulation reduces the number of prototypes required, saving the need for respins, thereby increasing development efficiency, and reducing overall time, cost, and risk for designers.
When it comes to power electronics and automotive design there is a strong demand for preliminary performance predictions of the EMI performance and power dissipation of the entire system. This leads to a growing demand for SPICE models for power semiconductors that can predict power conversion efficiencies, EMI and other relevant parameters.
These G2 SPICE models for discrete power devices have been created using the macro model format, combining multiple compact models to match the structure of the device, representing the electrical characteristics with a few non-linear elements and a continuous arbitrary function.
By using this approach, switching simulations are more accurate and closer to actual measurements by improving the reproducibility of the high-current-domain characteristics of the ID-VDS curve, including the voltage-dependent characteristics of the parasitic capacitance.
Available from Toshiba’s website, the G2 models cover low voltage MOSFETs (12V-300V) and medium to high voltage MOSFETs (400V to 900V).
Versions are available for PSpice and LTSpice.
