"The start of mass production in a CMOS compatible fab is a significant step forward toward achieving the widespread use of GaN power devices, as well as a demonstration of the successful integration of both companies' strengths," said Haruki Okada, president of Fujitsu Semiconductor. "We will continue to enhance our high quality manufacturing technology to support the stable supply of the products and bring the new value of GaN power devices to the world."
The automotive qualified Fukushima facility will allow dramatic expansion of Transphorm's GaN power device business. "Manufacturing Transphorm's GaN power devices at the Fujitsu facility will assure our customers of a scalable, stable supply of products with the stamp of Fujitsu's proven, high quality standard in mass manufacturing," said Transphorm CEO Fumihide Esaka. "We will continue to expand our GaN power device portfolio with continued partnership with Fujitsu."
