GaN patent and product portfolio licensed
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Transphorm has obtained a sole worldwide license to Furukawa Electric's gallium nitride (GaN) power device portfolio, including 40 issued US patents and 110 Japanese issued patents. Transphorm also has certain rights to sublicense these patents. Alongside the licensing agreement, Furukawa Electric has made an equity investment in Transphorm.
"Furukawa has conducted original GaN research starting from the 1990s and amassed a strong patent portfolio in GaN power devices and materials," said Takahide Kimura, Furukawa's corporate senior vp for new business development. "As we sought to unlock the value of this portfolio, as well as to secure a supply of GaN products for our own applications, Transphorm was an ideal choice."
The licensed family of patents encompasses various aspects of GaN power device manufacturing, materials and circuits, including key patents for GaN-on-Silicon epitaxial growth technology. As part of the agreement,. Transphorm now has more than 300 US patents and applications relating to GaN and more than 650 worldwide patents and applications.
In November 2013, Fujitsu, Fujitsu Semiconductor and Transphorm announced an agreement under which Fujitsu Semiconductor and Transphorm would integrate their GaN power devices for power supplies businesses. Fujitsu and Fujitsu Semiconductor also made an investment in Transphorm.