TSMC moves to 20nm process technology

The announcement was made by TSMC's senior vice president, Research & Development, Dr Shang-yi Chiang (pictured) at the company's 2010 Technology Symposium. Chiang said that the move to 20nm would create a superior gate density and chip performance to cost ratio than a 22nm process technology. He considers it a more viable platform for advanced technology designers and 20nm risk production will commence in the second half of 2012. According to TSMC, the technology will be based on a planar process with enhanced high-K metal gate, novel strained silicon and low-resistance copper Ultra-Low-K interconnects. Dr Chiang also indicated that the company has demonstrated record-setting feasibility of other transistor structures such as FinFET and high-mobility devices. Dr Chiang said: "We have reached a point in advanced technology development where we need to be actively concerned about the ROI of advanced technology. We also need to broaden our thinking beyond the process technology barriers that are inherent in every new node. Collaborative and co-optimised innovation is required to overcome the technological and economic challenges."