The companies have successfully qualified Attopsemi’s I-fuse OTP memory in relation to X-FAB’s XR013 open-platform foundry 130nm RF-SOI technology allowing customers to benefit from the incorporation of a compact (<0.2mm2 surface area) and robust OTP block into the core XR013 technology module, but without the need for additional or custom processing. Read operation is possible at both 2.5V and 1.8V for MIPI compatibility.
X-FAB’s XR013 is a feature rich, open-platform, 130nm technology that is optimised for RF applications.
The cooperation between Attopsemi and X-FAB presents greater scope for designers to integrate digital content with analogue trimming or data storage into next generation deployments, such as 5G New Radio (NR). A key benefit of using Attopsemi I-fuse OTP memory on the XR013 RF platform is the flexibility with which RF products can address different regional market requirements via a single chip design.
“Close collaboration with Attopsemi has created a cost-effective OTP memory solution for our customers using XR013,” said Dr. Greg U’Ren, Director of RF Technology at X-FAB. “This will be pivotal in enabling our customers to increase their on-chip functionality, giving them a strong foundation for further innovation and allowing the requirements of different geographic locations to be addressed.”
