The IPM technology offers an all-in-one solution including a 3-Phase water-cooled SiC MOSFET module with built-in gate drivers.
Co-optimising the electrical, mechanical and thermal design of the power module and its proximity control, this scalable platform is set to improve time-to-market for Electric Car OEMs and electric motor manufacturers.
The first product out of this scalable platform, a 3-Phase 1200V/450A SiC MOSFET IPM, features low conduction losses, with 3.25mOhms On resistance, and low switching losses, with respectively 8.3mJ turn-on and 11.2mJ turn-off energies at 600V/300A. It reduces losses by at least a factor 3 with respect to state-of-the-art IGBT power modules.
The new module is water-cooled through a lightweight AlSiC pin-fin baseplate for a junction-to-fluid thermal resistance of 0.15°C/W and is rated for junction temperature up to 175°C. The IPM withstands isolation voltages up to 3600V (50Hz, 1min).
The built-in gate driver includes three on-board isolated power supplies (one per phase) delivering each up to 5W allowing to easily drive the power module up to 25KHz and at ambient temperatures up to 125°C.
Peak gate current up to 10A and immunity to high dV/dt (>50KV/µs) enable fast switching of the power module and low switching losses.
Protection functions such as Undervoltage Lockout (UVLO), Active Miller Clamping (AMC), Desaturation Detection and Soft-Shut-Down (SSD) ensure the safe drive and reliable operation of the power module in case of fault events.
