Dual configuration SiC diodes from ST
Two new dual-configuration Schottky silicon carbide diodes have been unveiled by STMicroelectronics.
The devices offer a voltage rating of 650V and come in a choice of common cathode or series configurations, allowing use in interleaved or bridgeless power factor correction (PFC) circuits.
The modules are said to combine SiC performance advantages with the space savings and EMI reduction of dual integrated diodes.
They are suitable for interleaved or bridgeless PFC topologies that enhance energy efficiency of equipment such as server and telecom power supplies, solar inverters and electric vehicle charging stations.
